The Next 3rd Gen

Researchers at the U.S. Army Research Laboratory, ARL, in cooperation with Rockwell Scientific Corp. are making significant progress toward being able to fabricate MCT (mercury cadmium telluride) FPAs by Molecular Beam Epitaxy (MBE) directly on composite silicon substrates. Recently, they succeeded in making 256 x 256 pixel LWIR MCT FPAs (40 µm pitch) on silicon substrates having a lattice-matched CdSeTe buffer layer. Initial results indicate an NETD of 33 mK for a cut-off wavelength of 10 µm. Operability (fraction of usable pixels) was measured to be 99%.|

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